BIAS EFFECTS ON PREPARATION OF DOPED AMORPHOUS SILICON IN A TRIODE GLOW DISCHARGE.

被引：0
|
作者：
Aozasa, Masao [1 ]
Pyon, Ryun Gill [1 ]
Ando, Keiichi [1 ]
机构：
[1] Osaka City Univ, Jpn, Osaka City Univ, Jpn
来源：
Memoirs of the Faculty of Engineering, Osaka City University | 1986年 / 27卷
关键词：
PHOTOCONDUCTING DEVICES - Manufacture;
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学科分类号：
摘要：
Bias effects on the preparation of doped amorphous silicon are investigated using a triode glow discharge. The negative bias improves the quality of the phosphorus-doped amorphous silicon films, while it does not improve the quality of boron-doped films.
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页码：53 / 65
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