TWO NEW TYPES OF AMORPHOUS SEMICONDUCTOR MULTILAYERED STRUCTURES.

被引：0

作者：

Chen Zhiming ^{[1
]}

Wang Jiannong ^{[1
]}

Mei Xiangyang ^{[1
]}

Kong Guanglin ^{[1
]}

机构：

[1] Acad Sinica, China, Acad Sinica, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 03期

关键词：

SEMICONDUCTING SILICON;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Two new types of amorphous semiconductor multilayered structures consisting of repeat units of a-Si: H/a-C:H and mu c-Si:H/a-Si:H respectively, have been prepared by rf plasma deposition in a single-chamber plasma reactor. TEM studies indicate that the interfaces between the sublayers are shapr sharp, and that the layers are smooth and uniform. The observed blue shift of the optical absorption gap of a-Si:H inthe a-Si:H/a-C:H multilayered structures is described as a quantum size effect.

引用

页码：331 / 333

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