TWO NEW TYPES OF AMORPHOUS SEMICONDUCTOR MULTILAYERED STRUCTURES.

被引：0

作者：

Chen Zhiming ^{[1
]}

Wang Jiannong ^{[1
]}

Mei Xiangyang ^{[1
]}

Kong Guanglin ^{[1
]}

机构：

[1] Acad Sinica, China, Acad Sinica, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1986年 / 7卷 / 03期

关键词：

SEMICONDUCTING SILICON;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Two new types of amorphous semiconductor multilayered structures consisting of repeat units of a-Si: H/a-C:H and mu c-Si:H/a-Si:H respectively, have been prepared by rf plasma deposition in a single-chamber plasma reactor. TEM studies indicate that the interfaces between the sublayers are shapr sharp, and that the layers are smooth and uniform. The observed blue shift of the optical absorption gap of a-Si:H inthe a-Si:H/a-C:H multilayered structures is described as a quantum size effect.

引用

页码：331 / 333

共 50 条

[31] Optical determination of interface roughness in multilayered semiconductor structures
Mazilu, M
Donchev, V
Blum, O
Miller, A
APPLIED PHYSICS B-LASERS AND OPTICS, 1999, 68 (03): : 633 - 636
[32] Optical determination of interface roughness in multilayered semiconductor structures
M. Mazilu
V. Donchev
O. Blum
A. Miller
Applied Physics B, 1999, 68 : 633 - 636
[33] Surgery with the new structures. Implications for new surgeons
Bauer, H.
TRAUMA UND BERUFSKRANKHEIT, 2007, 9 : S264 - S273
[34] Effect of the Thermal Pretreatment on Orderly Arranged Amorphous PVC Structures.
Mischok, Walter
Hoesselbarth, Bernd
Zabel, Kurt
1600, (23):
[35] Synthesis and structures of two new types of boronium salts
Braun, Ulrike
Noeth, Heinrich
EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2007, (16) : 2296 - 2302
[36] ELECTROCHEMICAL PROFILING OF (AlGa)As-GaAs SEMICONDUCTOR LASER STRUCTURES.
Stagg, J.P.
Hulyer, P.J.
Foxon, C.T.
Annual Review - Philips Research Laboratories, 1982, : 30 - 32
[37] OPTICAL STUDIES OF SHALLOW IMPURITIES IN SEMICONDUCTOR QUANTUM WELL STRUCTURES.
Delalande, C.
1600, (146): : 1 - 2
[38] PROBABILITY METHOD FOR ESTIMATING THE EFFECTIVENESS OF REDUNDANCY IN SEMICONDUCTOR MEMORY STRUCTURES.
Borisov, V.S.
1600, (08):
[39] APPLICABILITY LIMIT OF THE DIFFUSION APPROXIMATION IN THE THEORY OF MULTILAYER SEMICONDUCTOR STRUCTURES.
Mnatsakanov, T.T.
Soviet journal of communications technology & electronics, 1987, 32 (05): : 86 - 90
[40] GAS-SENSITIVE METAL-OXIDE-SEMICONDUCTOR STRUCTURES.
Kuliyev, B.B.
Aliyev, F.G.
Kasumov, S.I.
Safarov, D.M.
Soviet journal of communications technology & electronics, 1986, 31 (03): : 180 - 183

← 1 2 3 4 5 →