Defect depth determination by thermal-wave imaging

被引：0
|
作者：
Favro, L.D. [1 ]
机构：
[1] Department of Physics, Institute for Manufacturing Research, Wayne State University, Detroit, MI 48202, United States
来源：
Progress in Natural Science | 1996年 / 6卷 / SPEC. ISS.期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
2
引用
收藏
相关论文
共 50 条
  • [31] Thermal-wave radar
    Tabatabaei, N.
    Mandelis, A.
    15TH INTERNATIONAL CONFERENCE ON PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA (ICPPP15), 2010, 214
  • [32] Thermal-Wave Diode
    Ordonez-Miranda, Jose
    Guo, Yangyu
    Alvarado-Gil, Juan J.
    Volz, Sebastian
    Nomura, Masahiro
    PHYSICAL REVIEW APPLIED, 2021, 16 (04)
  • [33] NONCONTACT THERMAL-WAVE IMAGING OF SUBSURFACE STRUCTURE WITH INFRARED DETECTION
    ERMERT, H
    DACOL, FH
    MELCHER, RL
    BAUMANN, T
    APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1136 - 1138
  • [34] CORRELATION OF THERMAL-WAVE IMAGING TO OTHER ANALYSIS-METHODS
    MAREK, J
    STRAUSSER, YE
    APPLIED PHYSICS LETTERS, 1984, 44 (12) : 1152 - 1154
  • [35] THERMAL-WAVE MICROSCOPY OF SEMICONDUCTORS
    ROSENCWAIG, A
    IEEE TRANSACTIONS ON SONICS AND ULTRASONICS, 1982, 29 (03): : 187 - 187
  • [36] DEPTH-PROFILING OF DOPANT REGIONS IN SILICON WITH THERMAL-WAVE MICROSCOPY.
    Rosencwaig, Allan
    Journal of Photoacoustics, 1982, 1 (01): : 75 - 85
  • [37] THERMAL-WAVE RESONATOR CAVITY
    SHEN, J
    MANDELIS, A
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (10): : 4999 - 5005
  • [38] IMAGING OF DOPANT REGIONS IN SILICON WITH THERMAL-WAVE ELECTRON-MICROSCOPY
    ROSENCWAIG, A
    WHITE, RM
    APPLIED PHYSICS LETTERS, 1981, 38 (03) : 165 - 167
  • [39] FATIGUE LIFETIME ASSESSMENT OF ADHESIVE JOINTS BY ULTRASONIC AND THERMAL-WAVE IMAGING
    AGLAN, H
    JOURNAL OF ADHESION SCIENCE AND TECHNOLOGY, 1994, 8 (02) : 101 - 115
  • [40] ADVANCES IN NON-CONTACT THERMAL-WAVE IMAGING WITH INFRARED DETECTION
    DACOL, FH
    ERMERT, H
    MELCHER, RL
    SCANNING ELECTRON MICROSCOPY, 1985, : 627 - 630
12345