Halogen impurities in silicon: shallow single donors

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 6卷 / 806期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] CENTRAL CELL EFFECTS ON THE POLARIZABILITIES OF SHALLOW DONORS IN SILICON
    MANIMAHALAI, K
    PALANIYANDI, E
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1985, 46 (07) : 831 - 836
  • [42] How does hydrogen transform into shallow donors in silicon?
    Kiyoi, Akira
    Umeda, Takahide
    PHYSICAL REVIEW B, 2023, 108 (23)
  • [43] Oxygen in silicon carbide: shallow donors and deep accepters
    Dalibor, T
    Trageser, H
    Pensl, G
    Kimoto, T
    Matsunami, H
    Nizhner, D
    Shigiltchoff, O
    Choyke, WJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 454 - 459
  • [44] Shallow thermal donors in nitrogen-doped silicon
    Voronkov, VV
    Porrini, M
    Collareta, P
    Pretto, MG
    Scala, R
    Falster, R
    Voronkova, GI
    Batunina, AV
    Golovina, VN
    Arapkina, LV
    Guliaeva, AS
    Milvidski, MG
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) : 4289 - 4293
  • [45] THZ LASING OF SHALLOW DONORS IN STRESSED SILICON CRYSTAL
    Shastin, Valery N.
    Zhukavin, Roman Kh.
    Kovalevsky, Konstantin A.
    Tsyplenkov, Veniamin V.
    Pavlov, Sergey G.
    Huebers, Heinz-Wilhelm
    CAOL 2008: PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, 2008, : 254 - +
  • [46] SHALLOW-DEEP INSTABILITIES OF CHALCOGEN DONORS IN SILICON
    RESCA, L
    PHYSICAL REVIEW B, 1982, 26 (06): : 3238 - 3242
  • [47] Shallow thermal donors in silicon doped with isotopic oxygen
    Yang, DR
    Klevermann, M
    Murin, LI
    PHYSICA B-CONDENSED MATTER, 2001, 302 : 193 - 196
  • [48] Capture process by shallow donors in silicon at low temperatures
    Palma, A
    JimenezTejada, JA
    Godoy, A
    Cartujo, P
    JOURNAL DE PHYSIQUE IV, 1996, 6 (C3): : 105 - 110
  • [49] Capture process by shallow donors in silicon at low temperatures
    Palma, A.
    Jimenez-Tejada, J.A.
    Godoy, A.
    Cartujo, P.
    Journal De Physique. IV : JP, 1996, 6 (03): : 105 - 110
  • [50] QUADRATIC ZEEMAN-EFFECT OF SHALLOW DONORS IN SILICON
    THILDERKVIST, A
    KLEVERMAN, M
    GROSSMANN, G
    GRIMMEISS, HG
    PHYSICAL REVIEW B, 1994, 49 (20): : 14270 - 14281
12345