共 50 条
- [21] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON PHYSICAL REVIEW B, 1985, 31 (08): : 5525 - 5528
- [26] INFLUENCE OF QUENCHING ON PROPERTIES OF SHALLOW DONORS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (10): : 1181 - 1182
- [27] GROUND STATES OF SHALLOW DONORS IN SILICON AND GERMANIUM JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (10): : 1162 - &
- [29] POLARIZABILITY TENSOR COMPONENTS OF SHALLOW DONORS IN SILICON BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 276 - 276
- [30] The microscopic structure of shallow donors in silicon carbide DEFECTS IN ELECTRONIC MATERIALS II, 1997, 442 : 619 - 624