Electrical, optical and alloy scattering studies of MOCVD grown InxGa1-xAs epitaxial layers on GaAs substrates

被引:0
|
作者
Pal, R. [1 ]
Durai, L. [1 ]
Srinivasan, T. [1 ]
Singh, M. [1 ]
Agarwal, S.K. [1 ]
Bose, D.N. [1 ]
机构
[1] Solidstate Physics Lab, Delhi, India
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:198 / 200
相关论文
共 50 条
  • [41] ELECTROREFLECTANCE STUDIES ABOVE THE FUNDAMENTAL GAP ON INXGA1-XAS LAYERS DEPOSITED ON GAAS
    WROBEL, JM
    AUBEL, JL
    REDDY, UK
    SUNDARAM, S
    SALERNO, JP
    GORMLEY, JV
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 266 - 267
  • [42] Chemical composition of InxGa1-xAs epilayers grown simultaneously on differently oriented GaAs substrates
    De Caro, L
    Giannini, C
    De Riccardis, MF
    Nacucchi, M
    Tapfer, L
    Hey, R
    Däweritz, L
    Ploog, KH
    JOURNAL OF CRYSTAL GROWTH, 2001, 223 (04) : 494 - 502
  • [43] Unstrained epitaxial InxGa1-xAs films obtained on porous GaAs
    Soldatenkov, FY
    Ulin, VP
    Yakovenko, AA
    Fedorova, OM
    Konnikov, SG
    Korol'kov, VI
    TECHNICAL PHYSICS LETTERS, 1999, 25 (11) : 852 - 854
  • [44] Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers
    Claeys, C.
    Hsu, P-C
    Mols, Y.
    Han, H.
    Bender, H.
    Seidel, F.
    Carolan, P.
    Merckling, C.
    Alian, A.
    Waldron, N.
    Eneman, G.
    Collaert, N.
    Heyns, M.
    Simoen, E.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2020, 9 (03)
  • [45] Strain study of GaAs/InxGa1-xAs/GaAs structures grown by MOVPE
    Bedoui, M.
    Habchi, M. M.
    Moussa, I.
    Rebey, A.
    El Jani, B.
    SURFACE & COATINGS TECHNOLOGY, 2016, 295 : 107 - 111
  • [46] THE ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN INXGA1-XAS ON GAAS
    KIM, TS
    SHIH, HD
    ANTHONY, JM
    DUNCAN, WM
    FARRINGTON, DL
    KEENAN, JA
    MOORE, TM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02): : 376 - 379
  • [47] CHARACTERISTICS OF PHONON-SPECTRA OF INXGA1-XAS EPITAXIAL LAYERS
    SOLOVEVA, EV
    GOGALADZE, DT
    BELOGOROKHOV, AN
    DOLGINOV, AM
    MILVIDSKII, MG
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1991, 17 (07): : 21 - 24
  • [48] MOCVD growth of InxGa1-xAs/GaAs multiple quantum well and superlattice structures for optical modulators
    Hasenohrl, S
    Kucera, M
    Novak, J
    Bujdak, M
    Elias, P
    Kudela, R
    SOLID-STATE ELECTRONICS, 1998, 42 (02) : 263 - 267
  • [49] A comparison of strain relief behaviour of InxGa1-xAs alloy on GaAs(001) and (110) substrates
    Zhang, X
    Pashley, DW
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1996, 7 (05) : 361 - 367
  • [50] RESIDUAL STRAIN ANALYSIS OF INXGA1-XAS/GAAS HETEROEPITAXIAL LAYERS
    KRISHNAMOORTHY, V
    LIN, YW
    CALHOUN, L
    LIU, HL
    PARK, RM
    APPLIED PHYSICS LETTERS, 1992, 61 (22) : 2680 - 2682