Electrical, optical and alloy scattering studies of MOCVD grown InxGa1-xAs epitaxial layers on GaAs substrates

被引：0
|
作者：
Pal, R. [1 ]
Durai, L. [1 ]
Srinivasan, T. [1 ]
Singh, M. [1 ]
Agarwal, S.K. [1 ]
Bose, D.N. [1 ]
机构：
[1] Solidstate Physics Lab, Delhi, India
来源：
Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 55卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：198 / 200
相关论文
共 50 条
  • [31] Ion channeling studies in InxGa1-xAs/GaAs
    Harikumar, V
    Siddiqui, AM
    Pathak, AP
    SOLID STATE PHENOMENA, 1997, 55 : 86 - 88
  • [32] Growth and characterization of GaAs/InxGa1-xAs/GaAs axial heterostructure nanowires by MOCVD
    Lv, Xiaolong
    Zhang, Xia
    Yan, Xin
    Cui, Jiangong
    Li, Junshuai
    Huang, Yongqing
    Ren, Xiaomin
    2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2012,
  • [33] Material properties of compositional graded InxGa1-xAs and InxAl1-xAs epilayers grown on GaAs substrates
    Chyi, JI
    Shieh, JL
    Pan, JW
    Lin, RM
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (11) : 8367 - 8370
  • [34] INTERFACIAL-BAND DISCONTINUITIES FOR STRAINED LAYERS OF INXGA1-XAS GROWN ON (100) GAAS
    MARIE, X
    BARRAU, J
    BROUSSEAU, B
    AMAND, T
    BROUSSEAU, M
    RAO, EVK
    ALEXANDRE, F
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 812 - 815
  • [35] INVESTIGATION OF INTERFACIAL ROUGHNESS OF INXGA1-XAS EPITAXIAL LAYERS ON GAAS AND INP SUBSTRATES BY SOFT-X-RAY REFLECTIVITY
    KROL, A
    RESAT, H
    SHER, CJ
    WORONICK, SC
    NG, W
    KAO, YH
    COLE, TL
    GREEN, AK
    LOWEMA, CK
    NEE, TW
    REHN, V
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 949 - 953
  • [36] Dislocation formation mechanism in strained InxGa1-xAs islands grown on GaAs(001) substrates
    Chen, Y
    Lin, XW
    LilientalWeber, Z
    Washburn, J
    Klem, JF
    Tsao, JY
    APPLIED PHYSICS LETTERS, 1996, 68 (01) : 111 - 113
  • [37] Cathodoluminescence from InxGa1-xAs layers grown on GaAs using a transmission electron microscope
    Yamamoto, N
    Mita, T
    Heun, S
    Franciosi, A
    Bonard, JM
    OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 245 - 250
  • [38] OPTICAL STUDIES IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
    IIKAWA, F
    CERDEIRA, F
    VAZQUEZLOPEZ, C
    MOTISUKE, P
    SACILOTTI, MA
    ROTH, AP
    MASUT, RA
    PHYSICAL REVIEW B, 1988, 38 (12): : 8473 - 8476
  • [39] Structural and optical studies of InxGa1-xAs/GaAs multiple quantum wells
    DiDio, M
    Lomascolo, M
    Passaseo, A
    Gerardi, C
    Giannini, C
    Quirini, A
    Tapfer, L
    Giugno, PV
    DeVittorio, M
    Greco, D
    Convertino, AL
    Vasanelli, L
    Rinaldi, R
    Cingolani, R
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) : 482 - 489
  • [40] Selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs nanowires by MOCVD
    Cui Jian-Gong
    Zhang Xia
    Yan Xin
    Li Jun-Shuai
    Huang Yong-Qing
    Ren Xiao-Min
    ACTA PHYSICA SINICA, 2014, 63 (13)
12345