Electrical, optical and alloy scattering studies of MOCVD grown InxGa1-xAs epitaxial layers on GaAs substrates

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作者：
Pal, R. [1 ]
Durai, L. [1 ]
Srinivasan, T. [1 ]
Singh, M. [1 ]
Agarwal, S.K. [1 ]
Bose, D.N. [1 ]
机构：
[1] Solidstate Physics Lab, Delhi, India
来源：
Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 55卷
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页码：198 / 200
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