ANALYSIS OF GOLD-DOPED MOS STRUCTURES.

被引：0
|
作者：
Sachelarie, D. [1 ]
机构：
[1] Research & Development Inst for, Electronic Components, Bucharest,, Rom, Research & Development Inst for Electronic Components, Bucharest, Rom
来源：
Physica Status Solidi (A) Applied Research | 1985年 / 90卷 / 01期
关键词：
SEMICONDUCTING SILICON - Doping;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A theoretical analysis of the charge state of gold atoms within the silicon surface depletion region which explains the experimental variation of minimum capacitance is presented. To explain the positive shift of the threshold voltage a new physical model is proposed: gold atoms with deep energy levels, E//c minus 0. 55 ev acceptor level and E//v plus 0. 35 ev donor level are accumulated at the silicon surface and their charge state in this region is predominantly acceptor type.
引用
收藏
页码：401 / 407
相关论文
共 50 条
  • [41] NEW RELAXATION EFFECT IN GOLD-DOPED LEAD
    TURNER, TJ
    NIELSENN, CH
    PAINTER, S
    SOLID STATE COMMUNICATIONS, 1972, 11 (04) : 577 - &
  • [42] The effect of tungsten on the properties of gold-doped silicon
    Rasmagin, S. I.
    Krasovskii, V. I.
    Zuev, V. V.
    Kononov, M. A.
    Feofanov, I. N.
    Kazaryan, M. A.
    INTERNATIONAL CONFERENCE ON ATOMIC AND MOLECULAR PULSED LASERS XIII, 2018, 10614
  • [43] AN INVESTIGATION OF RECOMBINATION IN GOLD-DOPED PIN RECTIFIERS
    COOPER, RW
    SOLID-STATE ELECTRONICS, 1983, 26 (03) : 217 - 226
  • [44] NOISE AND OSCILLATIONS IN GOLD-DOPED GERMANIUM PHOTODIODES
    BOLWIJN, PT
    RIJST, C
    VANAST, WG
    LAM, T
    SOLID-STATE ELECTRONICS, 1967, 10 (02) : 81 - &
  • [45] Effective Opacity for Gold-Doped Foam Plasmas
    Huang Cheng-Wu
    Song Tian-Ming
    Zhao Yang
    Zhu Tuo
    Shang Wan-Li
    Xiong Gang
    Zhang Ji-Yan
    Yang Jia-Min
    Jiang Shao-En
    CHINESE PHYSICS LETTERS, 2012, 29 (09)
  • [46] Infrared luminescence of gold-doped ZnSe crystals
    Avdonin, AN
    Ivanova, GN
    Kolibaba, GV
    Nedeoglo, DD
    Nedeoglo, ND
    Sirkeli, VP
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (02): : 837 - 840
  • [47] CHEMICAL-BOND MODEL FOR GOLD SURFACE-STATES IN GOLD-DOPED SILICON SILICON DIOXIDE STRUCTURES
    MOGHAL, GR
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1982, 53 (03) : 271 - 279
  • [48] STUDY OF AVALANCHE PROCESSES IN MOS STRUCTURES.
    Plotnikov, A.F.
    Shubin, V.E.
    Kravchenko, A.B.
    Gol'braikh, N.I.
    Soviet Microelectronics (English Translation of Mikroelektronika), 1979, 8 (01): : 35 - 40
  • [49] SURFACE PHOTOVOLTAGE MEASUREMENT IN MOS STRUCTURES.
    Pater, K.
    Applied physics. A, Solids and surfaces, 1987, A44 (02): : 191 - 194
  • [50] Threshold voltage of gold-doped p-MOSFET
    Il, Yong Choe
    Kaji, Hirakazu
    Watanabe, Kazuhito
    Satoh, Yoichi
    Kurosu, Tateki
    Iida, Masamori
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1990, 29 (05): : 844 - 845
12345