ANALYSIS OF GOLD-DOPED MOS STRUCTURES.

被引：0

作者：

Sachelarie, D. ^{[1
]}

机构：

[1] Research & Development Inst for, Electronic Components, Bucharest,, Rom, Research & Development Inst for Electronic Components, Bucharest, Rom

来源：

Physica Status Solidi (A) Applied Research | 1985年 / 90卷 / 01期

关键词：

SEMICONDUCTING SILICON - Doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A theoretical analysis of the charge state of gold atoms within the silicon surface depletion region which explains the experimental variation of minimum capacitance is presented. To explain the positive shift of the threshold voltage a new physical model is proposed: gold atoms with deep energy levels, E//c minus 0. 55 ev acceptor level and E//v plus 0. 35 ev donor level are accumulated at the silicon surface and their charge state in this region is predominantly acceptor type.

引用

页码：401 / 407

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