Interface structure of silicon and diamond film

被引：0
|
作者：
Ding, Zhengming [1 ]
Zhuang, Zhicheng [1 ]
Zhang, Weidong [1 ]
机构：
[1] Shanghai Jiao Tong Univ, Shanghai, China
来源：
Vacuum | 1991年 / 42卷 / 16期
关键词：
D O I：
10.1016/0042-207x(91)91284-u
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] The fabrication of ideal diamond disk(IDD)by casting diamond film on silicon wafer
    Chen YingTung
    Sung James C
    Kan MingChi
    Chang HsiaoKuo
    Sung Michael
    金刚石与磨料磨具工程, 2008, (S1) : 130 - 133+142
  • [42] Formation of highly oriented diamond film an (100) silicon
    Kim, YK
    Lee, JY
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 3660 - 3666
  • [43] Formation of highly oriented diamond film on (100) silicon
    Kim, Yoon-Kee
    Lee, Jai-Young
    Journal of Applied Physics, 1997, 81 (8 pt 1):
  • [44] Characterization of CVD diamond film/porous silicon composite
    Wang, Linjun
    Xia, Yiben
    Ju, Jianhua
    Fan, Yimin
    Zhang, Wenguang
    Mo, Yaowu
    Shi, Weimin
    Sang, Wenbin
    Guangxue Xuebao/Acta Optica Sinica, 2001, 21 (06): : 753 - 756
  • [45] Nucleation and growth of diamond film on porous silicon substrate
    Liao, Y
    Fang, RC
    Ye, F
    Shao, QY
    Wang, GZ
    MODERN PHYSICS LETTERS B, 1999, 13 (05): : 159 - 165
  • [46] Study on improvements of tribological properties of magnesium alloys - Diamond-like carbon film coating with the interface layer of carbonaceous film containing silicon
    Yamada, H
    Hiraide, T
    Takezawa, N
    Ono, A
    Fusegi, T
    Kuroda, S
    Yoshimoto, M
    JOURNAL OF JAPANESE SOCIETY OF TRIBOLOGISTS, 2003, 48 (08) : 667 - 672
  • [47] Structure of oxidized silicon film
    Kamogawa, H
    PHYSICAL REVIEW, 1938, 54 (01): : 91 - 91
  • [48] Fracture toughness of the interface between CVD diamond film and silicon substrate in the relation with methane concentration in the source gas mixture
    Takahashi, H
    Kamiya, S
    Saka, M
    Abé, H
    DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 760 - 764
  • [49] X-RAY STUDY OF THE INTERFACE LAYER BETWEEN LOW-TEMPERATURE DEPOSITED DIAMOND FILM AND THE SILICON SUBSTRATE
    LU, FX
    JIANG, GS
    YANG, BX
    CHEN, J
    WANG, JJ
    YUAN, Y
    DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 575 - 579
  • [50] Properties of the interface of diamond-like layers (DLC) with silicon
    Szmidt, J.
    Electron Technology (Warsaw), 1996, 29 (2-3): : 201 - 209
12345