Optical and electrical properties of layer semiconductor n-InSe doped with Sn

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作者：
Shigetomi, Shigeru [1 ]
Ikari, Tetsuo [2 ]
机构：
[1] Department of Physics, Kurume University, 67 Asahi-machi, Kurme, Fukuoka 830-0011, Japan
[2] Department of Electronics, Miyazaki University, 1-1 Gakuenkibanadai, Miyazaki 889-2155, Japan
来源：
| 1600年 / Japan Society of Applied Physics卷 / 41期
关键词：
Electric conductance - Electron emission - Hall effect - Impurities - Photocurrents - Photoluminescence - Semiconductor doping - Spectroscopic analysis - Tin;
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摘要：
Hall effect, photocurrent (PC) and photoluminescence (PL) measurements are carried out to study the impurity levels of Sn-doped n-InSe. From the temperature dependence of electron concentration and PC spectra, we found that the donor level in Sn-doped samples is located at about 0.06 eV below the conduction band. Moreover, the 1.275 eV emission band observed in the PL spectra is probably associated with the transition between the donor level at 0.06 eV below the conduction band and the valence band or the shallow acceptor level.
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