Optical and electrical properties of layer semiconductor n-InSe doped with Sn

被引：0

作者：

Shigetomi, Shigeru ^{[1
]}

Ikari, Tetsuo ^{[2
]}

机构：

[1] Department of Physics, Kurume University, 67 Asahi-machi, Kurme, Fukuoka 830-0011, Japan

[2] Department of Electronics, Miyazaki University, 1-1 Gakuenkibanadai, Miyazaki 889-2155, Japan

来源：

| 1600年 / Japan Society of Applied Physics卷 / 41期

关键词：

Electric conductance - Electron emission - Hall effect - Impurities - Photocurrents - Photoluminescence - Semiconductor doping - Spectroscopic analysis - Tin;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Hall effect, photocurrent (PC) and photoluminescence (PL) measurements are carried out to study the impurity levels of Sn-doped n-InSe. From the temperature dependence of electron concentration and PC spectra, we found that the donor level in Sn-doped samples is located at about 0.06 eV below the conduction band. Moreover, the 1.275 eV emission band observed in the PL spectra is probably associated with the transition between the donor level at 0.06 eV below the conduction band and the valence band or the shallow acceptor level.

引用

共 50 条

[31] Electrical Properties of Cd Doped InSe Crystals
Kaminskii, V. M.
Kovalyuk, Z. D.
Ivanov, V. I.
Tkachyuk, I. G.
Netyaga, V. V.
PHYSICS AND CHEMISTRY OF SOLID STATE, 2018, 19 (02): : 159 - 162
[32] Optical, dielectric and electrical properties of PVA doped with Sn nanoparticles
Amin, G. A. M.
Abd-El Salam, M. H.
MATERIALS RESEARCH EXPRESS, 2014, 1 (02):
[33] Electrical and optical properties of InSe with various interfaces
Zhou, Lili
Lv, Yanhui
Zhao, Yue
Wu, Gang
Xiao, Peiyao
Cho, Jiung
Choi, Miri
Coileain, Cormac O.
Chang, Ching-Ray
Wu, Han-Chun
APPLIED PHYSICS LETTERS, 2022, 121 (07)
[34] The optical properties of few-layer InSe
Song, Chaoyu
Huang, Shenyang
Wang, Chong
Luo, Jiaming
Yan, Hugen
JOURNAL OF APPLIED PHYSICS, 2020, 128 (06)
[35] Effect of random macroscopic defects on kinetic phenomena in a layered semiconductor n-InSe with strong electric fields
Abdinov, A. Sh
Babayeva, R. F.
INTERNATIONAL CONFERENCE PHYSICA.SPB/2019, 2019, 1400
[36] Annealing behavior of layer semiconductor p-InSe doped with Hg
Shigetomi, S
Ikari, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (3A): : 1184 - 1185
[37] Annealing behavior of layer semiconductor p-InSe doped with Hg
Shigetomi, Shigeru
Ikari, Tetsuo
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (3 A): : 1184 - 1185
[38] INVESTIGATION OF PHOTOMODIFIED SEMICONDUCTOR ELECTROLYTE INTERFACES - THE N-INSE CULSE3-SE0 POLYIODIDE SYSTEM
SEDARIES, D
LEVYCLEMENT, C
NEUMANNSPALLART, M
RYAN, MA
PETTENKOFER, C
LEWERENZ, HJ
SHEN, WM
TOMKIEWICZ, M
JAKUBOWICZ, A
JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1989, 86 (06) : 1265 - 1276
[39] Electrical properties of layer semiconductor p-GaSe doped with Cu
Shigetomi, S
Ikari, T
Nakashima, H
JOURNAL OF APPLIED PHYSICS, 1996, 80 (08) : 4779 - 4781
[40] Characterization of rare-earth-doped photocells based on p-GaSe/n-InSe heterojunctions
Abdinov, A. Sh.
Babayeva, R. F.
Aliyev, Y. I.
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2024,

← 1 2 3 4 5 →