Optical and electrical properties of layer semiconductor n-InSe doped with Sn

被引：7
|
作者：
Shigetomi, S
Ikari, T
机构：
[1] Kurume Univ, Dept Phys, Fukuoka 8300011, Japan
[2] Miyazaki Univ, Dept Elect, Miyazaki 8892155, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 09期
关键词：
layer semiconductor; Sn-doped InSe; impurity level; Hall effect; photocurrent; photoluminescence;
D O I：
10.1143/JJAP.41.5565
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Hall effect, photocurrent (PC) and photoluminescence (PL) measurements are carried out to study the impurity levels of Sn-doped n-InSe. From the temperature dependence of electron concentration and PC spectra. we found that the donor level in Sn-doped samples is located at about 0.06 eV below the conduction band. Moreover, the 1.275 eV emission band observed in the PL spectra is probably associated with the transition between the donor level at 0.06 eV below, the conduction band and the valence band or the shallow acceptor level.
引用
收藏
页码：5565 / 5566
页数：2
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