Contamination of silicon during ion-implantation and annealing

被引:0
|
作者
Liu, Xiao [1 ]
Pohl, R.O. [1 ]
Asher, Sally [1 ]
Crandall, R.S. [1 ]
机构
[1] Cornell Univ, Ithaca, United States
来源
Journal of Non-Crystalline Solids | / 227-230卷 / Pt A期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:407 / 410
相关论文
共 50 条
  • [31] ION-IMPLANTATION DAMAGE AND ANNEALING IN GASB
    CALLEC, R
    POUDOULEC, A
    SALVI, M
    LHARIDON, H
    FAVENNEC, PN
    GAUNEAU, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 532 - 537
  • [32] ION-IMPLANTATION DAMAGE AND ANNEALING IN GERMANIUM
    HOLLAND, OW
    APPLETON, BR
    NARAYAN, J
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2295 - 2301
  • [33] AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION - EFFECTS OF ION MASS AND THERMAL ANNEALING
    WADDELL, CN
    SPITZER, WG
    FREDRICKSON, JE
    HUBLER, GK
    KENNEDY, TA
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4361 - 4366
  • [34] ANNEALING OF DEFECTS AND ELECTRICAL ACTIVATION OF IMPURITIES DURING HIGH-INTENSITY ION-IMPLANTATION DOPING OF SILICON
    KOMAROV, FF
    NOVIKOV, AP
    RADISHEVSKII, IA
    SAMOILYUK, TT
    TOLSTYKH, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (09): : 1081 - 1082
  • [35] AN EVALUATION OF CONTAMINATION FROM PLASMA IMMERSION ION-IMPLANTATION ON SILICON DEVICE CHARACTERISTICS
    QIN, S
    CHAN, C
    JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (03) : 337 - 340
  • [36] POSITION OF BORON ATOMS IN SILICON LATTICE UNDER ION-IMPLANTATION AND FOLLOWING ANNEALING
    SKAKUN, NA
    VASILEV, VK
    DIKII, NP
    ZORIN, EI
    MATYASH, PP
    PAVLOV, PV
    TETELBAU.DI
    FIZIKA TVERDOGO TELA, 1974, 16 (04): : 1032 - 1035
  • [37] ANNEALING AND GETTERING BEHAVIOR OF INERT-GAS ION-IMPLANTATION DAMAGE IN SILICON
    CULLIS, AG
    SEIDEL, TE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C360 - C360
  • [38] STUDY OF SURFACE CONTAMINATION PRODUCED DURING HIGH DOSE ION-IMPLANTATION
    TSAI, MY
    STREETMAN, BG
    BLATTNER, RJ
    EVANS, CA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 98 - 102
  • [39] RADIOTRACER MEASUREMENTS OF SPUTTERED CONTAMINATION INCURRED DURING ION-IMPLANTATION PROCESSING
    MASTERS, BJ
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (03) : 1032 - 1034
  • [40] INFLUENCE OF THE CONDITIONS DURING ION-IMPLANTATION ON THE FORMATION OF DEFECTS IN SILICON
    ZHUKOVSKII, PV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (01): : 84 - 88