Contamination of silicon during ion-implantation and annealing

被引：0
|
作者：
Liu, Xiao [1 ]
Pohl, R.O. [1 ]
Asher, Sally [1 ]
Crandall, R.S. [1 ]
机构：
[1] Cornell Univ, Ithaca, United States
来源：
Journal of Non-Crystalline Solids | / 227-230卷 / Pt A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：407 / 410
相关论文
共 50 条
  • [11] ENERGY CONTAMINATION IN ION-IMPLANTATION
    VANHERK, J
    VANDERSTEEGE, AN
    VANMEYL, MLC
    ZALM, PC
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 25 - 29
  • [12] ENERGY CONTAMINATION IN ION-IMPLANTATION
    KAIM, RE
    WESTENDORP, JFM
    SOLID STATE TECHNOLOGY, 1989, 32 (04) : 65 - 66
  • [13] ION-IMPLANTATION AND LASER ANNEALING
    SORENSEN, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 186 (1-2): : 189 - 192
  • [14] DAMAGE DEPENDENCE OF EPITAXIAL REGROWTH RATE DURING ANNEALING OF AMORPHOUS SILICON FORMED BY ION-IMPLANTATION
    BEANLAND, DG
    WILLIAMS, JS
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (1-2): : 15 - 21
  • [15] HIGH CONDUCTIVITY, SHALLOW DOPING IN SILICON BY ION-IMPLANTATION AND FURNACE ANNEALING
    WU, S
    HODEL, MW
    SAMADPOUR, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2): : 330 - 335
  • [16] SILICON SOLAR-CELLS FABRICATED BY ION-IMPLANTATION AND LASER ANNEALING
    ITOH, H
    TAMURA, H
    MIYAO, M
    WARABISAKO, T
    ITOH, K
    SASAKI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 : 55 - 60
  • [17] ION-IMPLANTATION OF SILICON IN GALLIUM-ARSENIDE - DAMAGE AND ANNEALING CHARACTERIZATIONS
    PRIBAT, D
    DIEUMEGARD, D
    CROSET, M
    COHEN, C
    NIPOTI, R
    SIEJKA, J
    BENTINI, GG
    CORRERA, L
    SERVIDORI, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 737 - 742
  • [18] PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY ION-IMPLANTATION - THERMAL ANNEALING
    SPITZER, WG
    HUBLER, GK
    KENNEDY, TA
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 309 - 312
  • [19] ANALYSIS OF ANNEALING AND ION-IMPLANTATION EFFECTS IN TI/TIN CONTACTS ON SILICON
    MILOSAVLJEVIC, M
    BIBIC, N
    PERUSKO, D
    STOJANOVIC, MS
    WILSON, IH
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 50 (1-4): : 391 - 394
  • [20] Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour
    Chauhan, AR
    Bhatt, G
    Yadav, AD
    Dubey, SK
    Rao, TKG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 212 : 451 - 457
12345