Growth and optical properties of SrBi2Nb2O9 ferroelectric thin films using pulsed laser deposition

被引：0
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作者：
Yang, Pingxiong [1 ]
Carroll, David L. [1 ]
Ballato, John [1 ]
Schwartz, Robert W. [2 ]
机构：
[1] Ctr. Optical Mat. Sci./Eng. Technol., Sch. of Mat. Science and Engineering, Clemson University, Clemson, SC 29634-0971, United States
[2] Department of Ceramic Engineering, University of Missouri, Rolla, MO 65409-0330, United States
来源：
| 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
Ellipsometry - Energy gap - Glow discharges - Growth (materials) - Infrared radiation - Light emission - Microstructure - Photoluminescence - Pulsed laser deposition - Silicon - Spectroscopic analysis - Ultraviolet radiation;
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摘要：
SrBi2Nb2O9 (SBN) ferroelectric thin films were fabricated using plasma assisted laser deposition (PLD). The band-gap energy was determined to be 3.60 eV. A photoluminescence peak at 0.78 μm was observed whose intensity decreased with decreasing temperature, when excited with subband-gap energy. A mechanism for the observed photoluminescence, a Nb4+ -O- exciton in the NbO6 octahedron was suggested.
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