Oxygen implanted silicon investigated by positron annihilation spectroscopy

被引：0
|
作者：
Delft Univ of Technology, Delft, Netherlands [1 ]
机构：
来源：
Nucl Instrum Methods Phys Res Sect B | / 1-4卷 / 294-299期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
14
引用
收藏
相关论文
共 50 条
  • [31] POSITRON-ANNIHILATION SPECTROSCOPY APPLIED TO POROUS SILICON FILMS
    KNIGHTS, AP
    KOWALSKI, G
    SALEH, AS
    TOWNER, A
    PATEL, MI
    RICEEVANS, PC
    MOORE, M
    GLEDHILL, GA
    NOSSARZEWSKAORLOWSKA, E
    BRZOZOWSKI, A
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) : 4411 - 4415
  • [32] Positron annihilation spectroscopy
    Sundar, CS
    Viswanathan, B
    METALS MATERIALS AND PROCESSES, 1996, 8 (01): : 1 - 8
  • [33] Study of defects in ion-implanted silicon using photoluminescence and positron annihilation
    Harding, R
    Davies, G
    Coleman, PG
    Burrows, CP
    Wong-Leung, J
    PHYSICA B-CONDENSED MATTER, 2003, 340 : 738 - 742
  • [34] POSITRON-ANNIHILATION IN BORON-IMPLANTED N-TYPE SILICON
    HUNG, MC
    LUE, JT
    YEH, CK
    SOLID STATE COMMUNICATIONS, 1979, 32 (12) : 1169 - 1172
  • [35] On the Limitations of Positron Annihilation Spectroscopy in the Investigation of Ion-Implanted FeCr Samples
    Slugen, Vladimir
    Degmova, Jarmila
    Sojak, Stanislav
    Petriska, Martin
    Noga, Pavol
    Krsjak, Vladimir
    METALS, 2021, 11 (11)
  • [36] Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy
    Brusa, R. S.
    Mariazzi, S.
    Ravelli, L.
    Mazzoldi, P.
    Mattei, G.
    Egger, W.
    Hugenschmidt, C.
    Loewe, B.
    Pikart, P.
    Macchi, C.
    Somoza, A.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (19): : 3186 - 3190
  • [37] DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS INVESTIGATED BY POSITRON-ANNIHILATION
    IKARI, A
    KAWAKAMI, K
    HAGA, H
    UEDONO, A
    WEI, L
    KAWANO, T
    TANIGAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5585 - 5589
  • [38] DEFECTS IN CZOCHRALSKI-GROWN SILICON-CRYSTALS INVESTIGATED BY POSITRON-ANNIHILATION
    IKARI, A
    APPLIED SURFACE SCIENCE, 1995, 85 (1-4) : 253 - 258
  • [39] POINT-DEFECTS IN VANADIUM INVESTIGATED BY MOSSBAUER-SPECTROSCOPY AND POSITRON-ANNIHILATION
    JANOT, C
    GEORGE, B
    DELCROIX, P
    JOURNAL OF PHYSICS F-METAL PHYSICS, 1982, 12 (01): : 47 - 57
  • [40] Hydrogen implantation effect in copper alloys selected for ITER investigated by positron annihilation spectroscopy
    Slugen, V
    Kuriplach, J
    Ballo, P
    Domonkos, P
    NUCLEAR FUSION, 2004, 44 (01) : 93 - 97
12345