Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

被引：7
|
作者：
Harding, R [1 ]
Davies, G
Coleman, PG
Burrows, CP
Wong-Leung, J
机构：
[1] Kings Coll London, Dept Phys, London WC2R 2LS, England
[2] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England
[3] Australian Natl Univ, Dept Elect Mat Engn, Canberra, ACT 0020, Australia
来源：
PHYSICA B-CONDENSED MATTER | 2003年 / 340卷
关键词：
ion implantation; photoluminescence; PAS; silicon;
D O I：
10.1016/j.physb.2003.09.152
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 10(12)-10(14)cm(-2) measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600degreesC and assess the circumstances in which PL can be used as a quantitative technique. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：738 / 742
页数：5
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