共 50 条
- [33] ANNEALING EFFECT ON THE RESISTIVITY OF PHOSPHORUS DOPED LPCVD POLYCRYSTALLINE SILICON FILMS. Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E, 1986, E69 (04): : 235 - 237
- [36] Growth mechanism and dislocation characterization of silicon carbide epitaxial films SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES, 2006, 911 : 157 - +
- [37] Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams Uedono, Akira, 1600, JJAP, Minato-ku, Japan (33):