Characterization of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

被引：0

作者：

Cherns, D. ^{[1
]}

Young, W.T. ^{[1
]}

Ponce, F.A. ^{[1
]}

机构：

[1] Univ of Bristol, Bristol, United Kingdom

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1998年 / B50卷 / 1-3期

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摘要：

引用

页码：76 / 81

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