Characterization of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy

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作者：
Cherns, D. [1 ]
Young, W.T. [1 ]
Ponce, F.A. [1 ]
机构：
[1] Univ of Bristol, Bristol, United Kingdom
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1998年 / B50卷 / 1-3期
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页码：76 / 81
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