INFLUENCE OF TECHNOLOGICAL CONDITIONS UPON THE LUMINESCENCE PROPERTIES OF ZnTe-ZnSe HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY.

被引:0
|
作者
Skobeeva, V.M.
Serdyuk, V.V.
Semenyuk, L.N.
Malushin, N.V.
机构
来源
| 1600年 / 44期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [42] Influence of growth conditions on optical properties of ZnCdSe/ZnSe quantum wells grown by molecular beam epitaxy
    Godlewski, M
    Bergman, JP
    Monemar, B
    Kurtz, E
    Hommel, D
    ACTA PHYSICA POLONICA A, 1996, 90 (04) : 785 - 788
  • [43] GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy
    Milanova, Malina
    Donchev, Vesselin
    Arnaudov, Boris
    Alonso-Alvarez, Diego
    Terziyska, Penka
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (03) : 2073 - 2080
  • [44] GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy
    Malina Milanova
    Vesselin Donchev
    Boris Arnaudov
    Diego Alonso-Álvarez
    Penka Terziyska
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 2073 - 2080
  • [45] Influence of segregation on the composition of GaAs1-xSbx solid solutions grown by liquid-phase epitaxy
    Biryulin, YF
    SEMICONDUCTORS, 2002, 36 (12) : 1323 - 1325
  • [46] Influence of segregation on the composition of GaAs1−xSbx solid solutions grown by liquid-phase epitaxy
    Yu. F. Biryulin
    Semiconductors, 2002, 36 : 1323 - 1325
  • [47] Structural properties of ZnSySe1-y/ZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy
    Zhang, XG
    Kalisetty, S
    Robinson, J
    Zhao, G
    Parent, DW
    Ayers, JE
    Jain, FC
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) : 697 - 704
  • [48] Structural properties of ZnSySe1-y/ZnSe/GaAs(001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy
    Zhang, XG
    Kalisetty, S
    Robinson, J
    Zhao, G
    Parent, DW
    Ayers, JE
    Jain, FC
    JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) : 726 - 732
  • [49] ELECTRICAL-PROPERTIES OF MANGANESE DOPED GA1-XINXAS GROWN BY LIQUID-PHASE EPITAXY
    PHATAK, SB
    BEDAIR, SM
    FUJITA, S
    SOLID-STATE ELECTRONICS, 1980, 23 (08) : 839 - &
  • [50] PROPERTIES OF EU-YB-Y MAGNETIC GARNET-FILMS GROWN BY LIQUID-PHASE EPITAXY
    MOODY, JW
    SHAW, RW
    SANDFORT, RM
    STERMER, RL
    MATERIALS RESEARCH BULLETIN, 1974, 9 (04) : 527 - 535