共 50 条
- [31] IN0.53GA0.47AS/INP MODULATION-DOPED HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (06): : 1100 - 1102
- [32] In0.53Ga0.47As/InP modulation-doped heterostructures grown by liquid-phase epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 pt 1 (06): : 1100 - 1102
- [33] LUMINESCENCE OF N-IMPLANTED IN0.32GA0.68P GROWN BY LIQUID-PHASE EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9A): : 2660 - 2664
- [34] Luminescence of N-implanted In0.32Ga0.68P grown by liquid-phase epitaxy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (9 A): : 2660 - 2664
- [35] Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy 19TH INTERNATIONAL SCHOOL ON CONDENSED MATTER PHYSICS (ISCMP): ADVANCES IN NANOSTRUCTURED CONDENSED MATTER: RESEARCH AND INNOVATIONS, 2017, 794