Approach to patterning of extreme ultraviolet lithography masks using Ru buffer layer

被引：0
|
作者：
Lee, Byoung Taek [1 ]
Hoshino, Eiichi [1 ]
Takahashi, Masashi [1 ]
Yoneda, Takashi [1 ]
Yamanashi, Hiromasa [1 ]
Hoko, Hiromasa [1 ]
Ryoo, ManHyoung [1 ]
Chiba, Akira [1 ]
Ito, Masaaki [1 ]
Sugawara, Minoru [1 ]
Ogawa, Tarou [1 ]
Okazaki, Sinji [1 ]
机构：
[1] Association of Super-Advanced Elec., Atsugi Research Center, NTT Telecommunications Energy Lab., 3-1 Morimosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 12期
关键词：
D O I：
10.1143/jjap.40.6998
中图分类号：
学科分类号：
摘要：
Semiconducting films
引用
收藏
页码：6998 / 7001
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