Approach to patterning of extreme ultraviolet lithography masks using Ru buffer layer

被引：0

作者：

Lee, Byoung Taek ^{[1
]}

Hoshino, Eiichi ^{[1
]}

Takahashi, Masashi ^{[1
]}

Yoneda, Takashi ^{[1
]}

Yamanashi, Hiromasa ^{[1
]}

Hoko, Hiromasa ^{[1
]}

Ryoo, ManHyoung ^{[1
]}

Chiba, Akira ^{[1
]}

Ito, Masaaki ^{[1
]}

Sugawara, Minoru ^{[1
]}

Ogawa, Tarou ^{[1
]}

Okazaki, Sinji ^{[1
]}

机构：

[1] Association of Super-Advanced Elec., Atsugi Research Center, NTT Telecommunications Energy Lab., 3-1 Morimosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 12期

关键词：

D O I：

10.1143/jjap.40.6998

中图分类号：

学科分类号：

摘要：

Semiconducting films

引用

页码：6998 / 7001

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