Surface induced instabilities in 4H-SiC microwave MESFETs

被引：0
|
作者：
Hilton, K.P. [1 ]
Uren, M.J. [1 ]
Hayes, D.G. [1 ]
Wilding, P.J. [1 ]
Johnson, H.K. [1 ]
Guest, J.J. [1 ]
Smith, B.H. [1 ]
机构：
[1] DERA Def. Res. and Evaluation Agency, Malvern, Worcs. WR14 3PS, United Kingdom
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Drain contacts - Drain currents;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Electrothermal simulation of the self-heating effects in 4H-SiC MESFETs
    Lu Hong-Liang
    Zhang Yi-Men
    Zhang Yu-Ming
    Che Yong
    CHINESE PHYSICS B, 2008, 17 (04) : 1410 - 1414
  • [42] Nitrogen and phosphorus implanted MESFETs in semi-insulating 4H-SiC
    Tucker, JB
    Mitra, S
    Papanicolaou, N
    Siripuram, A
    Rao, MV
    Holland, OW
    DIAMOND AND RELATED MATERIALS, 2002, 11 (3-6) : 392 - 395
  • [43] Fabrication of 4H-SiC planar MESFETs having low contact resistance
    Na, HJ
    Kim, HJ
    Adachi, K
    Kiritani, N
    Tanimoto, S
    Okushi, H
    Arai, K
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1383 - 1386
  • [44] Transconductance frequency dispersion measurements on fully implanted 4H-SiC MESFETs
    Mitra, S
    Rao, MV
    Jones, KA
    SOLID-STATE ELECTRONICS, 2004, 48 (01) : 143 - 147
  • [45] Fabrication of 4H-SiC MESFETs on conducting substrates and analysis of their premature breakdown
    Song, NJ
    Kim, J
    Choi, CK
    Burm, J
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (02) : 418 - 422
  • [46] A New self-heating effects model for 4H-SiC MESFETs
    Cao, Quanjun
    Zhang, Yimen
    Zhang, Yuming
    Guo, Hui
    2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 274 - 275
  • [47] Aluminium implantation induced linear surface faults in 4H-SiC
    Wright, NG
    Vassilevski, KV
    Nikitina, I
    Horsfall, AB
    Johnson, CM
    Bhatnagar, P
    Tappin, P
    SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 613 - 616
  • [48] Femtosecond Laser-Induced Surface Patterning on 4H-SiC
    Tomita, Takuro
    Kumai, Ryota
    Kinoshita, Keita
    Matsuo, Shigeki
    Hashimto, Shuichi
    Nagase, Hirokazu
    Nakajima, Makoto
    Suemoto, Tohru
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 879 - +
  • [49] 4H-SiC pin diodes for microwave applications
    Zekentes, K.
    Camara, N.
    Romanov, L.
    Kirillov, A.
    Boltovets, M. S.
    Lebedev, A.
    Vassilevski, K. V.
    CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 2005, 1-2 : 17 - 25
  • [50] Microwave Annealing of Ion Implanted 4H-SiC
    Rao, Mulpuri V.
    Nath, A.
    Qadri, S. B.
    Tian, Y-L.
    Nipoti, R.
    ION IMPLANTATION TECHNOLOGY 2010, 2010, 1321 : 241 - +
12345