Surface induced instabilities in 4H-SiC microwave MESFETs

被引：0
|
作者：
Hilton, K.P. [1 ]
Uren, M.J. [1 ]
Hayes, D.G. [1 ]
Wilding, P.J. [1 ]
Johnson, H.K. [1 ]
Guest, J.J. [1 ]
Smith, B.H. [1 ]
机构：
[1] DERA Def. Res. and Evaluation Agency, Malvern, Worcs. WR14 3PS, United Kingdom
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Drain contacts - Drain currents;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] High power operation of 4H-SiC MESFETs at 10 GHz
    Sriram, S
    Smith, TJ
    Rowland, TJ
    Rowland, LB
    Burk, AA
    Augustine, G
    Balakrishna, V
    Hobgood, HM
    Brandt, CD
    55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 138 - 139
  • [22] Noise behavior of 4H-SiC MESFETs at low drain voltage
    Lab. Phys. Composants S., UMR-CNRS 5531, ENSERG, 23 rue des Martyrs, FR-38016 Grenoble Cedex 1, France
    不详
    不详
    Materials Science Forum, 2001, 353-356 : 703 - 706
  • [23] 4H-SiC MESFETs behavior after high dose irradiation
    Brisset, C.
    Noblanc, O.
    Picard, C.
    Joffre, F.
    Brylinski, C.
    IEEE Transactions on Nuclear Science, 2000, 47 (3 I) : 598 - 603
  • [24] Noise behavior of 4H-SiC MESFETs at low drain voltage
    Banc, C
    Royet, AS
    Ouisse, T
    Bano, E
    Noblanc, O
    Brylinski, C
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 703 - 706
  • [25] Numerical analysis on the 4H-SiC MESFETs with a source field plate
    Deng, Xiaochuan
    Zhang, Bo
    Li, Zhaoji
    Chen, Zhuangliang
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (07) : 701 - 704
  • [26] 4H-SiC MESFETs behavior after high dose irradiation
    Brisset, C
    Noblanc, O
    Picard, C
    Joffre, F
    Brylinski, C
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (03) : 598 - 603
  • [27] Investigation of the scalability of 4H-SiC MESFETs for high frequency applications
    Rorsman, N
    Nilsson, PÅ
    Eriksson, J
    Andersson, K
    Zirath, H
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1229 - 1232
  • [28] 4H-SiC MESFETs behavior after high dose irradiation
    Brisset, C
    Noblanc, O
    Picard, C
    Joffre, F
    Brylinski, C
    FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1999, : 289 - 294
  • [29] Microwave power MESFET on 4H-SiC
    THOMSON CSF, Lab. Ctrl. Rech. Domn. de Corbeville, 91404 Orsay, Cedex, France
    Diamond Relat. Mat., 10 (1508-1511):
  • [30] Microwave power MESFET on 4H-SiC
    Noblanc, O
    Chartier, E
    Arnodo, C
    Brylinski, C
    DIAMOND AND RELATED MATERIALS, 1997, 6 (10) : 1508 - 1511
12345