共 50 条
- [1] Surface induced instabilities in 4H-SiC microwave MESFETs SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1251 - 1254
- [2] Suppression of instabilities in 4H-SiC microwave MESFETs 8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 2000, : 67 - 70
- [3] Surface control of 4H-SiC MESFETs SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1387 - 1390
- [4] Performance comparison of 4H-SiC MESFETs 2013 ANNUAL INTERNATIONAL CONFERENCE ON EMERGING RESEARCH AREAS & 2013 INTERNATIONAL CONFERENCE ON MICROELECTRONICS, COMMUNICATIONS & RENEWABLE ENERGY (AICERA/ICMICR), 2013,
- [5] Fabrication and characterization of 4H-SiC MESFETs Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2007, 28 (SUPPL.): : 385 - 387
- [6] Simulation of surface state effects in the transient response of 4H-SiC MESFETs 2007 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLS 1 AND 2: VOL 1: COMMUNICATION THEORY AND SYSTEMS; VOL 2: SIGNAL PROCESSING, COMPUTATIONAL INTELLIGENCE, CIRCUITS AND SYSTEMS, 2007, : 1244 - +
- [7] Effects of a Multi-Recessed gate in Microwave 4H-SiC Power MESFETs 2009 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLUMES I & II: COMMUNICATIONS, NETWORKS AND SIGNAL PROCESSING, VOL I/ELECTRONIC DEVICES, CIRUITS AND SYSTEMS, VOL II, 2009, : 645 - +
- [9] Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 339 - 344