Si-doped InGaN films grown on GaN films

被引:0
|
作者
机构
[1] Nakamura, Shuji
[2] Mukai, Takashi
[3] Senoh, Masayuki
来源
Nakamura, Shuji | 1600年 / 32期
关键词
Semiconducting films;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
    Davies, M. J.
    Hammersley, S.
    Massabuau, F. C. -P.
    Dawson, P.
    Oliver, R. A.
    Kappers, M. J.
    Humphreys, C. J.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (05)
  • [22] Properties of Si-doped GaN layers grown by HVPE
    Fomin, AV
    Nikolaev, AE
    Nikitina, IP
    Zubrilov, AS
    Mynbaeva, MG
    Kuznetsov, NI
    Kovarsky, AP
    Ber, BJ
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (01): : 433 - 437
  • [23] Study of residual stress in reactively sputtered epitaxial Si-doped GaN films
    Monish, Mohammad
    Major, S. S.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2022, 150
  • [24] Growth and characterization of high quality continuous GaN films on Si-doped cracked GaN templates
    Chua, SJ
    Hao, M
    Zhang, J
    Sia, EK
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (01): : 421 - 424
  • [25] InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
    L. W. Wu
    S. J. Chang
    Y. K. Su
    T. Y. Tsai
    T. C. Wen
    C. H. Kuo
    W. C. Lai
    J. K. Sheu
    J. M. Tsai
    S. C. Chen
    B. R. Huang
    Journal of Electronic Materials, 2003, 32 : 411 - 414
  • [26] InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer
    Wu, LW
    Chang, SJ
    Su, YK
    Tsai, TY
    Wen, TC
    Kuo, CH
    Lai, WC
    Sheu, JK
    Tsai, JM
    Chen, SC
    Huang, BR
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 411 - 414
  • [27] Characterization of Si-doped GaN on (00.1) sapphire grown by MOCVD
    Kim, CS
    Lee, DK
    Lee, CR
    Noh, SK
    Lee, IH
    Bae, IH
    NITRIDE SEMICONDUCTORS, 1998, 482 : 567 - 572
  • [28] Electron density gradients in ammonothermally grown Si-doped GaN
    Cusco, Ramon
    Domenech-Amador, Nuria
    Jimenez, Juan
    Artus, Luis
    APPLIED PHYSICS EXPRESS, 2014, 7 (02)
  • [29] Optical investigations on si-doped InN films
    Maleyre, B
    Briot, O
    Ruffenach, S
    Gil, B
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 4, 2005, 2 (04): : 1379 - 1383
  • [30] THE PROPERTIES OF AL,SI-DOPED MNBI FILMS
    WANG, YJ
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1990, 84 (1-2) : 39 - 46