Growth and Characterization of Epitaxial InN Films on Sapphire Substrate Using an ArF Excimer Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LA-MOVPE)

被引:0
|
作者
Bhuiyan, Ashraful Ghani [1 ]
Tanaka, Tatsuya [1 ]
Kasashima, Ken [1 ]
Hashimoto, Akihiro [1 ]
Yamamoto, Akio [1 ,2 ]
机构
[1] Department of Electrical Engineering, Fukui University, 3-9-1 Bunkyo, Fukui 910-8507, Japan
[2] CREATE FUKUI JST, 61-10 Kawai-washizuka, Fukui 910-0102, Japan
来源
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 12期
关键词
D O I
10.1143/jjap.42.7284
中图分类号
学科分类号
摘要
Metallic films
引用
收藏
页码:7284 / 7289
相关论文
共 36 条
  • [31] Low-Temperature Growth of Crystalline Gallium Nitride Films Using Vibrational Excitation of Ammonia Molecules in Laser-Assisted Metalorganic Chemical Vapor Deposition
    Golgir, Hossein Rabiee
    Gao, Yang
    Zhou, Yun Shen
    Fan, Lisha
    Thirugnanam, Premkumar
    Keramatnejad, Kamran
    Jiang, Lan
    Silvain, Jean-Francois
    Lu, Yong Feng
    CRYSTAL GROWTH & DESIGN, 2014, 14 (12) : 6248 - 6253
  • [32] Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
    Buzynin, Yu. N.
    Viktorov, M. E.
    Vodop'yanov, A. V.
    Golubev, S. V.
    Drozdov, M. N.
    Drozdov, Yu. N.
    Luk'yanov, A. Yu.
    Mansfeld, D. A.
    Skorokhodov, E. V.
    Khrykin, O. I.
    Shashkin, V. I.
    TECHNICAL PHYSICS LETTERS, 2013, 39 (01) : 51 - 54
  • [33] Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
    Yu. N. Buzynin
    M. E. Viktorov
    A. V. Vodop’yanov
    S. V. Golubev
    M. N. Drozdov
    Yu. N. Drozdov
    A. Yu. Luk’yanov
    D. A. Mansfeld
    E. V. Skorokhodov
    O. I. Khrykin
    V. I. Shashkin
    Technical Physics Letters, 2013, 39 : 51 - 54
  • [34] X-ray diffraction characterization of epitaxial zinc-blende GaN films on a miscut GaAs(001) substrates using the hydride vapor-phase epitaxy method
    Yang, CC
    Wu, MC
    Lee, CH
    Chi, GC
    JOURNAL OF CRYSTAL GROWTH, 1999, 206 (1-2) : 8 - 14
  • [35] IMPROVED SOLID-PHASE EPITAXIAL-GROWTH OF LITHIUM TANTALATE THIN-FILMS ON SAPPHIRE, USING A 2-STEP METALORGANIC CHEMICAL-VAPOR-DEPOSITION PROCESS
    WERNBERG, AA
    BRAUNSTEIN, GH
    GYSLING, HJ
    APPLIED PHYSICS LETTERS, 1993, 63 (19) : 2649 - 2651
  • [36] MONOLITHIC INTEGRATION OF A SINGLE-QUANTUM-WELL LASER-DIODE AND A MODE-SIZE CONVERTER USING SHADOW-MASKED METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH
    VERMEIRE, G
    VERMAERKE, F
    MOERMAN, I
    HAES, J
    BAETS, R
    VANDAELE, P
    DEMEESTER, P
    GUSTAFSSON, A
    SAMUELSON, L
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 875 - 880