Growth and Characterization of Epitaxial InN Films on Sapphire Substrate Using an ArF Excimer Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LA-MOVPE)

被引：0

作者：

Bhuiyan, Ashraful Ghani ^{[1
]}

Tanaka, Tatsuya ^{[1
]}

Kasashima, Ken ^{[1
]}

Hashimoto, Akihiro ^{[1
]}

Yamamoto, Akio ^{[1
,2
]}

机构：

[1] Department of Electrical Engineering, Fukui University, 3-9-1 Bunkyo, Fukui 910-8507, Japan

[2] CREATE FUKUI JST, 61-10 Kawai-washizuka, Fukui 910-0102, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 12期

关键词：

D O I：

10.1143/jjap.42.7284

中图分类号：

学科分类号：

摘要：

Metallic films

引用

页码：7284 / 7289

共 36 条

[21] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND 1.5-MU-M LASER FABRICATION USING ETHYLDIMETHYLINDIUM, TERTIARYBUTYLPHOSPHINE, AND TERTIARYBUTYLARSINE
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[22] GROWTH OF GAN SINGLE-CRYSTAL FILMS USING ELECTRON-CYCLOTRON RESONANCE PLASMA EXCITED METALORGANIC VAPOR-PHASE EPITAXY
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SASAKI, T
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[23] METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INGAASP MULTI-QUANTUM-WELL LASER-DIODES USING ENTIRELY ORGANIC SOURCES
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JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 886 - 891
[24] Homoepitaxial growth of (0001)- and (000(1)over-bar)-oriented ZnO thin films via metalorganic vapor-phase epitaxy and their characterization
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JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 390 - 398
[25] GAAS VERTICAL AND LATERAL GROWTH ENHANCEMENT USING TRIMETHYLGALLIUM AND TRIMETHYLARSENIC IN SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY ON A (111)B SUBSTRATE
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JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 297 - 301
[26] Influence of the laser wavelength on the epitaxial growth and electrical properties of La0.8Sr0.2MnO3 films grown by excimer laser-assisted MOD
Tsuchiya, Tetsuo
Nakajima, Tomohiko
Kumagai, Toshiya
APPLIED SURFACE SCIENCE, 2009, 255 (24) : 9804 - 9807
[27] METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF INGAP USING TERTIARYBUTYLPHOSPHINE AND ITS APPLICATION TO SELECTIVE REGROWTH OF CURRENT BLOCKING LAYERS OF LASER-DIODES
HORITA, M
USAMI, M
MATSUSHIMA, Y
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 291 - 296
[28] INASP PHASE FORMATIONS DURING THE GROWTH OF A GAINASP/INP DISTRIBUTED-FEEDBACK LASER-DIODE STRUCTURE ON CORRUGATED INP USING METALORGANIC VAPOR-PHASE EPITAXY
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LEE, JK
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KIM, HM
PARK, HM
APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3191 - 3193
[29] Cathodoluminescence characterization of [11(2)over-bar0]-oriented InGaN/GaN thin films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy
Kusakabe, K.
Furuzuki, T.
Ohkawa, K.
Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4 No 7 2007, 2007, 4 (07): : 2544 - 2547
[30] LOW-TEMPERATURE GROWTH OF GAN SINGLE-CRYSTAL FILMS USING ELECTRON-CYCLOTRON RESONANCE PLASMA EXCITED METALORGANIC VAPOR-PHASE EPITAXY
ZEMBUTSU, S
SASAKI, T
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 250 - 256

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