CONTRIBUTION OF SIMS TO THE CHARACTERIZATION OF III-V SEMICONDUCTOR LAYERS GROWN BY MOLECULAR BEAM EPITAXY.

被引：0
|
作者：
Spiller, G.D.T. [1 ]
Andrews, D.A. [1 ]
机构：
[1] British Telecom Research Lab, Ipswich, Engl, British Telecom Research Lab, Ipswich, Engl
来源：
| 1600年 / 36期
关键词：
DOPANT PROFILING - MATRIX ELEMENT PROFILING - SINGLE CRYSTAL LAYERS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：11 / 12
相关论文
共 50 条
  • [41] COEVAPORATION PHOSPHORUS DOPING IN Si GROWN BY MOLECULAR BEAM EPITAXY.
    Kubiak, R.A.A.
    Patel, G.
    Leong, W.Y.
    Houghton, R.
    Parker, E.H.C.
    Applied Physics A: Solids and Surfaces, 1986, A41 (03): : 233 - 235
  • [42] QUANTUM WELL INJECTION LASERS GROWN BY MOLECULAR BEAM EPITAXY.
    Woodbridge, K.
    Blood, P.
    Fletcher, E.D.
    Hulyer, P.J.
    Annual Review - Philips Research Laboratories, 1983, : 50 - 51
  • [43] Cl doping of ZnSe films grown by molecular beam epitaxy.
    Hernandez, L
    deMelo, O
    MelendezLira, M
    HernandezCalderon, I
    SURFACES, VACUUM, AND THEIR APPLICATIONS, 1996, (378): : 235 - 238
  • [44] Elaboration of III-V nitrides quantum dots in molecular beam epitaxy
    Daudin, B
    Widmann, F
    Feuillet, G
    Samson, Y
    Rouviere, JL
    Pelekanos, N
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1177 - 1180
  • [45] Gas-source molecular beam epitaxy of III-V nitrides
    North Carolina State Univ, Raleigh, United States
    J Cryst Growth, 1-2 ([d]87-101):
  • [46] THE CURRENT STATE OF III-V MOLECULAR-BEAM EPITAXY FOR OPTOELECTRONICS
    PANISH, MB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C95 - C95
  • [47] GROWTH OF III-V MATERIALS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    ABERNATHY, CR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 869 - 875
  • [48] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
    CHO, AY
    THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
  • [49] Integration of III-V and Si CMOS Devices by Molecular Beam Epitaxy
    Lubyshev, D.
    Fastenau, J. M.
    Liu, W. K.
    GRAPHENE AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS, 2009, 19 (05): : 295 - 308
  • [50] Gas-source molecular beam epitaxy of III-V nitrides
    Davis, RF
    Paisley, MJ
    Sitar, Z
    Kester, DJ
    Ailey, KS
    Linthicum, K
    Rowland, LB
    Tanaka, S
    Kern, RS
    JOURNAL OF CRYSTAL GROWTH, 1997, 178 (1-2) : 87 - 101
12345