CONTRIBUTION OF SIMS TO THE CHARACTERIZATION OF III-V SEMICONDUCTOR LAYERS GROWN BY MOLECULAR BEAM EPITAXY.

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作者：
Spiller, G.D.T. [1 ]
Andrews, D.A. [1 ]
机构：
[1] British Telecom Research Lab, Ipswich, Engl, British Telecom Research Lab, Ipswich, Engl
来源：
| 1600年 / 36期
关键词：
DOPANT PROFILING - MATRIX ELEMENT PROFILING - SINGLE CRYSTAL LAYERS;
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页码：11 / 12
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