ELECTRICAL PROPERTIES OF OVAL DEFECTS IN GaAs GROWN BY MBE.

被引:0
|
作者
Shinohara, Masanori
Ito, Tomonori
Wada, Kazumi
Imamura, Yoshihiro
机构
来源
| 1600年 / 23期
关键词
ELECTRIC PROPERTIES - TRANSISTORS; FIELD EFFECT;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] ACCOMMODATION OF LARGE LATTICE MISMATCH OF GaP ON GaAs(100) AND GaAs ON GaP(100) LAYERS GROWN BY MBE.
    Nomura, Takashi
    Maeda, Yuuji
    Miyao, Masahiro
    Hagino, Minoru
    Ishikawa, Kenji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (06): : 908 - 911
  • [22] A MICROSTRUCTURAL STUDY OF OVAL DEFECTS IN III-V SEMICONDUCTOR EPITAXIAL LAYERS GROWN BY MBE ON GAAS (001)
    ZHANG, X
    STATONBEVAN, AE
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 211 - 216
  • [23] A COMPREHENSIVE STUDY AND METHODS OF ELIMINATION OF OVAL DEFECTS IN MBE-GAAS
    CHAND, N
    CHU, SNG
    JOURNAL OF CRYSTAL GROWTH, 1990, 104 (02) : 485 - 497
  • [24] A MICROSTRUCTURAL STUDY OF OVAL DEFECTS IN III-V SEMICONDUCTOR EPITAXIAL LAYERS GROWN BY MBE ON GAAS (001)
    ZHANG, X
    STATONBEVAN, AE
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 211 - 216
  • [25] INFLUENCE OF MATERIAL DESIGN PARAMETERS ON RADIATIVE RECOMBINATION IN GaAs DOPING SUPERLATTICES GROWN BY MBE.
    Jung, H.
    Ploog, K.
    Applied Physics A: Solids and Surfaces, 1985, A37 (02): : 83 - 87
  • [26] REDUCTION OF A HIGHLY-RESISTIVE LAYER AT AN INTERRUPTED-INTERFACE OF GaAs GROWN BY MBE.
    Iimura, Yasufumi
    Takasugi, Hidetoshi
    Kawabe, Mitsuo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (01): : 95 - 98
  • [27] DEFECTS IN MBE AND MOCVD-GROWN GAAS ON SI
    EAGLESHAM, DJ
    DEVENISH, R
    FAN, RT
    HUMPHREYS, CJ
    MORKOC, H
    BRADLEY, RR
    AUGUSTUS, PD
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 105 - 110
  • [28] SURFACE-DEFECTS ON MBE-GROWN GAAS
    SUZUKI, Y
    SEKI, M
    HORIKOSHI, Y
    OKAMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167
  • [29] ELECTRICAL-PROPERTIES OF INDIUM DOPED GAAS-LAYERS GROWN BY MBE
    MISSOUS, M
    SINGER, KE
    NICHOLAS, DJ
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 314 - 318
  • [30] Effect of bismuth on structural and electrical properties of In As films grown on GaAs substrates by MBE
    Zhao, H.
    Malko, A.
    Lai, Z. H.
    JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 89 - 93