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- [21] ACCOMMODATION OF LARGE LATTICE MISMATCH OF GaP ON GaAs(100) AND GaAs ON GaP(100) LAYERS GROWN BY MBE. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (06): : 908 - 911
- [22] A MICROSTRUCTURAL STUDY OF OVAL DEFECTS IN III-V SEMICONDUCTOR EPITAXIAL LAYERS GROWN BY MBE ON GAAS (001) INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 211 - 216
- [24] A MICROSTRUCTURAL STUDY OF OVAL DEFECTS IN III-V SEMICONDUCTOR EPITAXIAL LAYERS GROWN BY MBE ON GAAS (001) MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 211 - 216
- [25] INFLUENCE OF MATERIAL DESIGN PARAMETERS ON RADIATIVE RECOMBINATION IN GaAs DOPING SUPERLATTICES GROWN BY MBE. Applied Physics A: Solids and Surfaces, 1985, A37 (02): : 83 - 87
- [26] REDUCTION OF A HIGHLY-RESISTIVE LAYER AT AN INTERRUPTED-INTERFACE OF GaAs GROWN BY MBE. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (01): : 95 - 98
- [27] DEFECTS IN MBE AND MOCVD-GROWN GAAS ON SI INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 105 - 110
- [28] SURFACE-DEFECTS ON MBE-GROWN GAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (02): : 164 - 167