REDUCTION OF A HIGHLY-RESISTIVE LAYER AT AN INTERRUPTED-INTERFACE OF GaAs GROWN BY MBE.

被引：0

作者：

Iimura, Yasufumi ^{[1
]}

Takasugi, Hidetoshi ^{[1
]}

Kawabe, Mitsuo ^{[1
]}

机构：

[1] Univ of Tsukuba, Inst of Materials, Science, Sakura, Jpn, Univ of Tsukuba, Inst of Materials Science, Sakura, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1986年 / 25卷 / 01期

关键词：

GALLIUM AND ALLOYS - Desorption - MOLECULAR BEAM EPITAXY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The desorption of Ga atoms from GaAs films at high substrate temperatures was utilized as an etch-back method for the reduction of highly-resistive layers formed around growth-interrupted interfaces in Si-doped GaAs. The mechanism of the reduction of the highly-resistive layer was studied by a C-V carrier profiling technique, secondary-ion mass spectroscopy and deep-level transient spectroscopy, and was clarified as being due to compensation by Si atoms accumulated on the GaAs surface during the thermal etching procedure.

引用

页码：95 / 98

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