ELECTROCHEMICALLY DEPOSITED SCHOTTKY CONTACTS ON n-EPITAXIAL SILICON.

被引：0

作者：

Singh, B.K.

Mitra, R.N.

Daw, A.N.

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来源：

Indian Journal of Pure and Applied Physics | 1980年 / 18卷 / 05期

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摘要：

Schottky diode has been fabricated by electrochemical deposition of copper on n-epitaxial silicon. The value of barrier height and ideality factor were found to be in good agreement with the results of D. Kahng and M. P. Lepselter obtained by vacuum evaporation.

引用

页码：368 / 369

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