Evaluation of InP and GaAs Substrates by Photoluminescence Imaging.

被引：0

作者：

Krawczyk, S.K. ^{[1
]}

Garrigues, M. ^{[1
]}

Schohe, K. ^{[1
]}

Lallemand, C. ^{[1
]}

机构：

[1] CNRS, Ecully, Fr, CNRS, Ecully, Fr

来源：

Le Vide, les couches minces | 1988年 / 43卷 / 241期

关键词：

PHOTOLUMINESCENCE - Imaging Techniques - SEMICONDUCTING GALLIUM ARSENIDE - Substrates - SUBSTRATES - Electronic Properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The authors present a photoluminescence imaging technique that can be used to obtain information about the quality and uniformity of the electronic properties of substrates, epitaxial films, and semiconductor/insulator boundaries. The method is particularly useful for evaluating InP and GaAs substrates. The presence of dislocations, extended near-surface defects, and process induced modifications of the surface recombination velocity can be easily assessed.

引用

页码：171 / 173

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