Evaluation of InP and GaAs Substrates by Photoluminescence Imaging.

被引：0
|
作者：
Krawczyk, S.K. [1 ]
Garrigues, M. [1 ]
Schohe, K. [1 ]
Lallemand, C. [1 ]
机构：
[1] CNRS, Ecully, Fr, CNRS, Ecully, Fr
来源：
Le Vide, les couches minces | 1988年 / 43卷 / 241期
关键词：
PHOTOLUMINESCENCE - Imaging Techniques - SEMICONDUCTING GALLIUM ARSENIDE - Substrates - SUBSTRATES - Electronic Properties;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The authors present a photoluminescence imaging technique that can be used to obtain information about the quality and uniformity of the electronic properties of substrates, epitaxial films, and semiconductor/insulator boundaries. The method is particularly useful for evaluating InP and GaAs substrates. The presence of dislocations, extended near-surface defects, and process induced modifications of the surface recombination velocity can be easily assessed.
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页码：171 / 173
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