ACCURATE CAD MODEL FOR THE AMBIPOLAR a-Si:H TFT.

被引：0
|
作者：
Neudeck, Gerold W. [1 ]
Chung, Kyo Y. [1 ]
Bare, Harold F. [1 ]
机构：
[1] Purdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USA
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 04期
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摘要：
11
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页码：866 / 871
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