Low temperature growth of 3C-SiC on silicon for advanced substrate development

被引：0
|
作者：
Okhuysen, M.E. [1 ]
Mazzola, M.S. [1 ]
Lo, Y.-H. [2 ]
机构：
[1] Emerging Mat. Research Laboratory, Dept. of Elec. and Comp. Engineering, Mississippi State, MS 39762-9571, United States
[2] School of Electrical Engineering, Cornell University, Ithaca, NY 14853-5401, United States
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Antiphase domain;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Crystal growth of 3C-SiC polytype on 6H-SiC(0001) substrate
    Diani, M
    Simon, L
    Kubler, L
    Aubel, D
    Matko, I
    Chenevier, B
    Madar, R
    Audier, M
    JOURNAL OF CRYSTAL GROWTH, 2002, 235 (1-4) : 95 - 102
  • [42] The growth of 3C-SiC on Si substrate using a SiCN buffer layer
    He, X. L.
    Chai, X. Z.
    Yu, L.
    Han, P.
    Fan, S.
    Ji, X. L.
    Li, Z. Y.
    Liu, B.
    Tao, T.
    Li, J. L.
    Xie, Z. L.
    Xiu, X. Q.
    Chen, P.
    Hua, X. M.
    Zhao, H.
    Zhang, R.
    Zheng, Y. D.
    THIN SOLID FILMS, 2018, 662 : 168 - 173
  • [43] MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer
    Katagiri, Masayoshi
    Fang, Hao
    Miyake, Hideto
    Hiramatsu, Kazumasa
    Oku, Hidehiko
    Asamura, Hidetoshi
    Kawamura, Keisuke
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
  • [44] Activation energy of nanoscale 3C-SiC island growth on Si substrate
    Sun, Y
    Ayabe, T
    Miyasato, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (10B): : L1166 - L1168
  • [45] LOW-TEMPERATURE GROWTH OF 3C-SIC ON SI SUBSTRATE BY CHEMICAL VAPOR-DEPOSITION USING HEXAMETHYLDISILANE AS A SOURCE MATERIAL
    TAKAHASHI, K
    NISHINO, S
    SARAIE, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (12) : 3565 - 3571
  • [46] Selective epitaxial growth of pyramidal 3C-SiC on patterned Si substrate
    Okui, Y
    Jacob, C
    Ohshima, S
    Nishino, S
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 331 - 334
  • [47] Homoepitaxial growth of 3C-SiC on 3C-SiC substrates grown by sublimation method
    Nishino, K
    Kimoto, T
    Matsunami, H
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 89 - 92
  • [48] Growth Kinetics of 3C-SiC on α-SiC by VLS
    Soueidan, M.
    Kim-Hak, O.
    Ferro, G.
    Habka, N.
    Nsouli, B.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 199 - +
  • [49] Toward high-quality 3C-SiC membrane on a 3C-SiC pseudo-substrate
    Khazaka, Rami
    Bahette, Emilie
    Portail, Marc
    Alquier, Daniel
    Michaud, Jean-Francois
    MATERIALS LETTERS, 2015, 160 : 28 - 30
  • [50] Growth of 3C-SiC from silicon solvent and restrain of 6H-SiC
    Ma, Jian-Ping
    Lu, Gang
    Lei, Tian-Min
    Chen, Zhi-Ming
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (06): : 751 - 754
12345