Low temperature growth of 3C-SiC on silicon for advanced substrate development

被引：0
|
作者：
Okhuysen, M.E. [1 ]
Mazzola, M.S. [1 ]
Lo, Y.-H. [2 ]
机构：
[1] Emerging Mat. Research Laboratory, Dept. of Elec. and Comp. Engineering, Mississippi State, MS 39762-9571, United States
[2] School of Electrical Engineering, Cornell University, Ithaca, NY 14853-5401, United States
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Antiphase domain;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Temperature oscillation as a real-time monitoring of the growth of 3C-SiC on Si substrate
    Saito, Eiji
    Konno, Atsushi
    Ito, Takashi
    Yasui, Kanji
    Nakazawa, Hideki
    Endoh, Tetsuo
    Narita, Yuzuru
    Suemitsu, Maki
    APPLIED SURFACE SCIENCE, 2008, 254 (19) : 6235 - 6237
  • [22] Effects of substrate temperature on heteroepitaxial growth of 3C-SiC thin films by MBE on si(111) substrate
    Liu Jin-Feng
    Liu Zhong-Liang
    Wu Yu-Yu
    Xu Peng-Shou
    Tang Hong-Gao
    JOURNAL OF INORGANIC MATERIALS, 2007, 22 (04) : 720 - 724
  • [23] Effects of substrate temperature on heteroepitaxial growth of 3C-SiC thin films by MBE on Si(111) substrate
    National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
    不详
    Wuji Cailiao Xuebao, 2007, 4 (720-724): : 720 - 724
  • [24] Patterned substrate with inverted silicon pyramids for 3C-SiC epitaxial growth: A comparison with conventional (001) Si substrate
    La Via, Francesco
    D'Arrigo, Giuseppe
    Severino, Andrea
    Piluso, Nicolo
    Mauceri, Marco
    Locke, Christopher
    Saddow, Stephen E.
    JOURNAL OF MATERIALS RESEARCH, 2013, 28 (01) : 94 - 103
  • [25] EFFECT OF ACCEPTOR IMPURITY ADDITION IN LOW-TEMPERATURE GROWTH OF 3C-SIC
    TAKAHASHI, K
    NISHINO, S
    SARAIE, J
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 617 - 622
  • [26] 3C-SiC seeded growth on diamond substrate by VLS transport
    Vo-Ha, A.
    Rebaud, M.
    Carole, D.
    Lazar, M.
    Tallaire, A.
    Souliere, V.
    Pinero, J. C.
    Araujo, D.
    Ferro, G.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 234 - +
  • [27] Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition
    Namavar, F
    Colter, PC
    Planes, N
    Fraisse, B
    Pernot, J
    Juillaguet, S
    Camassel, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 571 - 575
  • [28] REDUCTION OF ETCH PITS IN HETEROEPITAXIAL GROWTH OF 3C-SIC ON SILICON
    TIN, CC
    HU, R
    COSTON, RL
    PARK, J
    JOURNAL OF CRYSTAL GROWTH, 1995, 148 (1-2) : 116 - 124
  • [29] Research on the epitaxial growth technique of 3C-SiC on silicon substrates
    Li, Yuejin
    Yang, YIntang
    Jia, Hujun
    Zhu, Zuoyun
    Xi'an Dianzi Keji Daxue Xuebao/Journal of Xidian University, 2000, 27 (01): : 80 - 82
  • [30] 3C-SiC heteroepitaxial growth on Inverted Silicon Pyramids (ISP)
    D'Arrigo, G.
    Severino, A.
    Milazzo, G.
    Bongiorno, C.
    Piluso, N.
    Abbondanza, G.
    Mauceri, M.
    Condorelli, G.
    La Via, F.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 135 - +
12345