Low temperature growth of 3C-SiC on silicon for advanced substrate development

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作者：
Okhuysen, M.E. [1 ]
Mazzola, M.S. [1 ]
Lo, Y.-H. [2 ]
机构：
[1] Emerging Mat. Research Laboratory, Dept. of Elec. and Comp. Engineering, Mississippi State, MS 39762-9571, United States
[2] School of Electrical Engineering, Cornell University, Ithaca, NY 14853-5401, United States
来源：
Materials Science Forum | 2000年 / 338卷
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