Thermal Oxidation of In2S3/GaAs Structures.

A layer of In//2S//3 on a GaAs surface alters the thermal oxidation kinetics of GaAs and makes it possible to obtain amorphous dielectric layers containing small quantities of gallium and arsenic oxides. The rate of growth of the films increases 40-fold in comparison with the oxidation of GaAs alone. Diffusion plays a decisive role during the entire process. At the same time chemical transformations occur mainly in the deposited indium sulfide layer (oxidation to sulfate and oxide). The layer formed prevents the evaporation of the volatile component of the substrate, as a result of which the film is enriched with arsenic.