Thermal Oxidation of In2S3/GaAs Structures.

被引：0
|
作者：
Mittova, I.Ya.
Pukhova, V.V.
机构：
来源：
Neorganiceskie materialy | 1986年 / 22卷 / 06期
关键词：
CATALYSTS - Semiconducting Indium Compounds - CHEMICAL REACTIONS - Catalysis - SEMICONDUCTING FILMS - Growth - SEMICONDUCTOR DEVICE MANUFACTURE - SEMICONDUCTOR DEVICES; MOS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A layer of In//2S//3 on a GaAs surface alters the thermal oxidation kinetics of GaAs and makes it possible to obtain amorphous dielectric layers containing small quantities of gallium and arsenic oxides. The rate of growth of the films increases 40-fold in comparison with the oxidation of GaAs alone. Diffusion plays a decisive role during the entire process. At the same time chemical transformations occur mainly in the deposited indium sulfide layer (oxidation to sulfate and oxide). The layer formed prevents the evaporation of the volatile component of the substrate, as a result of which the film is enriched with arsenic.
引用
收藏
页码：885 / 888
相关论文
共 50 条
  • [21] AQUEOUS PRECIPITATION AND ELECTRICAL-PROPERTIES OF IN2S3 - CHARACTERIZATION OF THE IN2S3 POLYANILINE AND IN2S3 POLYPYRROLE HETEROJUNCTIONS
    DALAS, E
    SAKKOPOULOS, S
    VITORATOS, E
    MAROULIS, G
    KOBOTIATIS, L
    JOURNAL OF MATERIALS SCIENCE, 1993, 28 (20) : 5456 - 5460
  • [22] FABRICATION OF GaAs HETEROJUNCTION RING STRUCTURES.
    Ford, C.J.B.
    Ahmed, H.
    Microelectronic Engineering, 1987, 6 (1-4) : 169 - 174
  • [23] THERMAL-OXIDATION OF GAAS/SB2O4 STRUCTURES
    MITTOVA, IY
    BORZAKOVA, GV
    SVIRIDOVA, VV
    BALASHOVA, LE
    SEMENOV, VN
    VEREVKINA, ZA
    INORGANIC MATERIALS, 1989, 25 (08) : 1051 - 1054
  • [24] Lithium in In2S3
    R. Dedryvère
    M. Uhrmacher
    A. Lohstroh
    A. Picard-Garcia
    J. Olivier-Fourcade
    J.-C. Jumas
    Hyperfine Interactions, 2001, 136-137 : 479 - 484
  • [25] Temperature effect on the growth of In2S3 by thermal evaporation technique
    Timoumi, A
    Bouzouita, H
    Kanzari, N
    Rezig, B
    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2006, 33 (02): : 77 - 81
  • [26] Lithium in In2S3
    Dedryvère, R
    Uhrmacher, M
    Lohstroh, A
    Picard-Garcia, A
    Olivier-Fourcade, J
    Jumas, JC
    HYPERFINE INTERACTIONS, 2001, 136 (3-8): : 479 - 484
  • [27] Optical properties of β-In2S3 and β-In2S3:Co2+ single crystals
    Choe, SH
    Bang, TH
    Kim, NO
    Kim, HG
    Lee, CI
    Jin, MS
    Oh, SK
    Kim, WT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (02) : 98 - 102
  • [28] Thermal expansion and thermal conductivity of In2S3 and CuIn5S8 compounds and (CuIn5S8)1 − x(In2S3)x alloys
    I. V. Bodnar
    Semiconductors, 2014, 48 : 557 - 561
  • [29] Synthesis of In2S3(1-x)O3x thin films by oxidation of In2S3 film and influence of film microstructure
    Laghrib, S.
    Hamici, M.
    Gagou, Y.
    Vaillant Roca, L.
    Saint-Gregoire, P.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2014, 211 (12): : 2865 - 2870
  • [30] OXIDATION OF IN2S3 AND IN2SE3 COLLOIDS AS STUDIED BY PULSE-RADIOLYSIS
    DIMITRIJEVIC, NM
    KAMAT, PV
    RADIATION PHYSICS AND CHEMISTRY, 1988, 32 (01) : 53 - 57
12345