InGaAs/InP:Fe JUNCTION FIELD-EFFECT TRANSISTOR FOR OPTOELECTRONIC INTEGRATION.

被引：0

作者：

Albrecht, Helmut ^{[1
]}

Huber, Herbert ^{[1
]}

Lauterbach, Christl ^{[1
]}

Plihal, Manfred ^{[1
]}

机构：

[1] Seimens AG, Forschungslaboratorien,, Munich, West Ger, Seimens AG, Forschungslaboratorien, Munich, West Ger

来源：

Siemens Forschungs- und Entwicklungsberichte/Siemens Research and Development Reports | 1985年 / 14卷 / 06期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TRANSISTORS, FIELD EFFECT

引用

页码：295 / 298

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