High-speed response of uni-traveling-carrier photodiodes

被引:0
|
作者
Ishibashi, Tadao [1 ]
Kodama, Satoshi [1 ]
Shimizu, Naofumi [1 ]
Furuta, Tomofumi [1 ]
机构
[1] NTT System Electronics Lab, Kanagawa, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:6263 / 6268
相关论文
共 50 条
  • [21] Study on the saturation characteristics of high-speed uni-traveling-carrier photodiodes based on field screening analysis
    石拓
    熊兵
    孙长征
    罗毅
    ChineseOpticsLetters, 2011, 9 (08) : 83 - 86
  • [22] Photoresponse Analysis for Uni-Traveling-Carrier Photodiodes
    Wen, Huafeng
    Nie, Qiuhua
    Xu, Tiefeng
    Liu, Taijun
    Li, Yingfeng
    Zhang, Xiupu
    2011 INTERNATIONAL CONFERENCE ON ELECTRONICS, COMMUNICATIONS AND CONTROL (ICECC), 2011, : 2753 - 2756
  • [23] Photoresponse characteristics of uni-traveling-carrier photodiodes
    Ishibashi, T
    Furuta, T
    Fushimi, H
    Ito, H
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX, 2001, 4283 : 469 - 479
  • [24] InP/InGaAs uni-traveling-carrier photodiodes
    Ishibashi, T
    Furuta, T
    Fushimi, H
    Kodama, S
    Ito, H
    Nagatsuma, T
    Shimizu, N
    Miyamoto, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (06): : 938 - 949
  • [25] High-Speed Uni-Traveling-Carrier Photodetector with the New Design of Absorber and Collector
    Chen, Qingtao
    Huang, Yongqing
    Duan, Xiaofeng
    Liu, Feng
    Kang, Chao
    Wang, Qi
    Wang, Jun
    Zhang, Xia
    Ren, Xiaomin
    2015 OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC), 2015,
  • [26] Low-Bias High-Speed Modified Uni-Traveling-Carrier Photodiode
    Wu, Jie
    Huang, Yongqing
    Fei, Jiarui
    Liu, Tao
    Duan, Xiaofeng
    Liu, Kai
    Ren, Xiaomin
    2017 16TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS & NETWORKS (ICOCN 2017), 2017,
  • [27] Recent development on uni-traveling-carrier photodiodes and their applications
    Ito, H
    Nagatsuma, T
    Ishibashi, T
    LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 386 - 387
  • [28] High-speed uni-traveling-carrier photodiodes monolithically integrated with InP heterojunction bipolar transistors using Be ion implantation
    Kashio, Norihide
    Yamahata, Shoji
    Ida, Minoru
    Kurishima, Kenji
    Sano, Kimikazu
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10A): : 7605 - 7610
  • [29] High-speed uni-traveling-carrier photodiodes monolithically integrated with InP heterojunction bipolar transistors using be ion implantation
    NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 10 A (7605-7610):
  • [30] Design and fabrication of uni-traveling-carrier InGaAs photodiodes
    Yang, H.
    Daunt, C. L. L. M.
    Gity, F.
    Lee, K.
    Han, W.
    Thomas, K.
    Corbett, B.
    Peters, F. H.
    OPTOELECTRONIC DEVICES AND INTEGRATION III, 2010, 7847