Design and fabrication of uni-traveling-carrier InGaAs photodiodes

被引：0
|
作者：
Yang, H. [1 ]
Daunt, C. L. L. M. [1 ]
Gity, F. [1 ]
Lee, K. [1 ]
Han, W. [1 ]
Thomas, K. [1 ]
Corbett, B. [1 ]
Peters, F. H. [1 ]
机构：
[1] Tyndall Natl Inst, Cork, Ireland
来源：
OPTOELECTRONIC DEVICES AND INTEGRATION III | 2010年 / 7847卷
关键词：
Photodiode; unitraveling carrier (UTC); PIN; high speed; high saturation power;
D O I：
10.1117/12.870522
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photodiode (PD) is a key component in optical transmission and optical measurement systems. In this paper, we present the design and fabrication of traveling-wave edge-coupled Unitraveling Carrier (UTC) PD. The fabricated UTC PD with 40 mu mx5 mu m waveguide shows 3dB bandwidth 13GHZ and 32GHz under 0 biases and -1V respectively. In parallel, PIN PD was also fabricated for comparison and only shows 4GHz and 18GHz under same bias conditions. This indicates the UTC PD is superior to the PIN PD for higher speed operation, especially in application of system without power supply.
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页数：8
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