Line edge roughness of developed resist with low-dose electron beam exposure

被引：0
|
作者：
Kotera, Masatoshi [1 ]
Yamada, Takeshi [1 ]
Ishida, Yoshihisa [1 ]
机构：
[1] Department of Electronic Engineering, Osaka Institute of Technology, Omiya, Asahi-ku, Osaka 535-8585, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 B期
关键词：
D O I：
10.1143/jjap.41.4150
中图分类号：
学科分类号：
摘要：
Photoresists
引用
收藏
页码：4150 / 4156
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